| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791525 | Journal of Crystal Growth | 2012 | 8 Pages |
Abstract
⺠Epitaxial growth of high quality NiSb on GaAs is shown for the first time. ⺠Strain relaxation is investigated experimentally and theoretically. ⺠Ga segregation is suppressed and the native oxide is more benign than on MnSb. ⺠The electronic structure of NiSb is reported.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
James D. Aldous, Christopher W. Burrows, Ian Maskery, Matthew Brewer, David Pickup, Marc Walker, James Mudd, Thomas P.A. Hase, Jon A. Duffy, Stuart Wilkins, Cecilia Sánchez-Hanke, Gavin R. Bell,