| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791527 | Journal of Crystal Growth | 2012 | 5 Pages |
Abstract
⺠Investigation of Si-layers obtained by zone melting recrystallization on SiC-base. ⺠Twins form 1 to 100 μm wide stripes nearly parallel to the growth direction. ⺠This regime of twinning differs from layers formed on SiO2-base. ⺠As twins show no enhanced recombination the regime is favorable for solar cells.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
T. Kunz, M.T. Hessmann, R. Auer, A. Bochmann, S. Christiansen, C.J. Brabec,