| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791529 | Journal of Crystal Growth | 2012 | 5 Pages |
Abstract
We attempted to grow CoxFe4−xN epitaxial thin films on SrTiO3(001) substrates by molecular beam epitaxy supplying solid Co and Fe and a radio frequency N2 plasma, simultaneously. The composition ratio of Co/Fe in CoxFe4−xN was controlled by changing the weight ratio of Co to Fe flakes in the crucible of the Knudsen cell used. We confirmed epitaxial growth of CoxFe4−xN (0.4 ► Co3FeN has attracted attention because of its large spin polarization. ► We had already reported the epitaxial growth of Fe4N and Co4N films by MBE. ► In this work, CoxFe4−xN (0.4
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Tatsunori Sanai, Keita Ito, Kaoru Toko, Takashi Suemasu,