| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791559 | Journal of Crystal Growth | 2012 | 5 Pages |
Abstract
⺠Semipolar (202¯1) AlGaN, GaN and InGaN layers were grown on (202¯1) GaN substrates by MOVPE. ⺠Undulations along [101¯4] were observed in all layers. ⺠A model to explain the undulations was developed and exhibits (101¯1) and (101¯0) microfacets to be the origin. ⺠TEM images confirm that 50 nm long (101¯1) and (101¯0) microfacets to be very stable. ⺠Growth condition for smooth (202¯1) GaN layers with rms roughness <0.4nm has been established.
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Simon Ploch, Tim Wernicke, Johannes Thalmair, Matthias Lohr, Markus Pristovsek, Josef Zweck, Markus Weyers, Michael Kneissl,