| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791602 | Journal of Crystal Growth | 2012 | 6 Pages |
Abstract
⺠Growth temperature of AlxGa1âxN epilayers was varied from 1050 to 1090 °C by a HVPE system. ⺠Crystallinity of AlxGa1âxN epilayers was improved with the increase of growth temperature. ⺠As the growth temperature was increased, compositional non-uniformity also disappeared. ⺠AlxGa1âxN epilayers grown at 1090 °C showed the best surface roughness and crystallinity.
Related Topics
Physical Sciences and Engineering
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Condensed Matter Physics
Authors
Ji-Sun Lee, Dongjin Byun, Hae-Kon Oh, Young Jun Choi, Hae-Yong Lee, Jin-Ho Kim, Tae-Young Lim, Jonghee Hwang,