Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1791626 | Journal of Crystal Growth | 2012 | 6 Pages |
Abstract
⺠We fabricated abrupt InGaP/GaAs and GaAs/InGaP hetero-interfaces using MOVPE. ⺠Improvement of hetero-interface was realized by optimized gas-switching sequence. ⺠Abruptnesses of hetero-interfaces were quantitatively evaluated by STEM.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Takayuki Nakano, Tomonari Shioda, Naomi Enomoto, Eiji Abe, Masakazu Sugiyama, Yoshiaki Nakano, Yukihiro Shimogaki,