Article ID Journal Published Year Pages File Type
1791626 Journal of Crystal Growth 2012 6 Pages PDF
Abstract
► We fabricated abrupt InGaP/GaAs and GaAs/InGaP hetero-interfaces using MOVPE. ► Improvement of hetero-interface was realized by optimized gas-switching sequence. ► Abruptnesses of hetero-interfaces were quantitatively evaluated by STEM.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
Authors
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