| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791653 | Journal of Crystal Growth | 2012 | 5 Pages |
Abstract
⺠Developed a safe and cost-effective approach for synthesis of n-type Sb-doped Si nanowires. ⺠A 3-4 nm thick amorphous oxide shell covers the surface of the nanowire, post-growth. ⺠Composition of the shell was confirmed by Raman spectroscopy. ⺠Doping concentration of Sb was found to be dependent on temperature. ⺠FET devices fabricated to determine the electrical characteristics of the nanowires.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Prathyusha Nukala, Gopal Sapkota, Pradeep Gali, U. Philipose,