| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791657 | Journal of Crystal Growth | 2012 | 6 Pages |
Abstract
⺠Substrate misorientation effect on the GaAs morphology was studied. ⺠Bismuth flow deposit time effect on the GaAs morphology was studied. ⺠Spectral reflectance (SR) and microscopy (AFM) were used to quantify our work. ⺠Correlation between SR and AFM shows the complementarity of two techniques.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
I. Massoudi, M.M. Habchi, A. Rebey, B. El Jani,