Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1791694 | Journal of Crystal Growth | 2012 | 4 Pages |
Abstract
NaSi was heated at various Na vapor pressures (pNa 0.1–1.2 atm) and temperatures (973–1173 K) to investigate the condition of Si crystal formation from NaSi by Na evaporation. Silicon single crystals 1–3 mm in diameter were grown by evaporation of Na from Na–Si melt at 1173 K and pNa=0.74 atm.
► We investigated the formation of Si and NaSi at various temperatures and Na vapor pressures. ► We revealed the condition of Si crystallization from Na–Si melt. ► Si single crystals of about 1–3 mm were obtained by evaporation of Na from Na–Si melt.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Haruhiko Morito, Taiki Karahashi, Hisanori Yamane,