| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791728 | Journal of Crystal Growth | 2012 | 5 Pages |
Abstract
⺠InAs nanowire formation by selective area molecular beam epitaxy. ⺠In-plane-oriented InAs nanowires were obtained on GaAs (110) plane. ⺠Directly application of the nanowires to planar nanowire field-effect transistors. ⺠Output and transfer characteristics of the transistors were measured. ⺠Almost no temperature influence on field-effect mobility was observed.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Masashi Akabori, Tatsuya Murakami, Syoji Yamada,