| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791730 | Journal of Crystal Growth | 2012 | 6 Pages |
Abstract
⺠BaSi2 layers were grown epitaxially on Si(001), despite the large lattice mismatch. ⺠a-Axis-oriented BaSi2 layers were grown. ⺠The grain size of BaSi2 on Si(001) was found to be as large as 1 μm. ⺠The grain size of BaSi2 on Si(001) is much larger than that on Si(111).
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Katsuaki Toh, Kosuke O. Hara, Noritaka Usami, Noriyuki Saito, Noriko Yoshizawa, Kaoru Toko, Takashi Suemasu,