Article ID Journal Published Year Pages File Type
1791762 Journal of Crystal Growth 2012 6 Pages PDF
Abstract
► We achieved fast, reproducible, thick epitaxial growth of GaP with high quality. ► We found the best orientation of substrate and pattern for making GaP OP-templates. ► We adapted MBE inversion and wafer fused bonding to prepare GaP OP-templates. ► We achieved vertical propagation of the domain walls for both types templates. ► We proved that by HVPE we can grow +350 μm thick high quality QPM GaP structures.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
Authors
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