Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1791762 | Journal of Crystal Growth | 2012 | 6 Pages |
Abstract
⺠We achieved fast, reproducible, thick epitaxial growth of GaP with high quality. ⺠We found the best orientation of substrate and pattern for making GaP OP-templates. ⺠We adapted MBE inversion and wafer fused bonding to prepare GaP OP-templates. ⺠We achieved vertical propagation of the domain walls for both types templates. ⺠We proved that by HVPE we can grow +350 μm thick high quality QPM GaP structures.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
V. Tassev, M. Snure, R. Peterson, R. Bedford, D. Bliss, G. Bryant, M. Mann, W. Goodhue, S. Vangala, K. Termkoa, A. Lin, J.S. Harris, M.M. Fejer, C. Yapp, S. Tetlak,