| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791807 | Journal of Crystal Growth | 2012 | 5 Pages |
Abstract
⺠We used an InGaN interlayer to improve the crystalline quality of a-plane GaN film. ⺠A very special template was formed to realize the NELO process. ⺠Improvement of crystalline quality was demonstrated by various experiments.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Zhiwei Li, Hongyuan Wei, Xiaoqing Xu, Guijuan Zhao, Xianglin Liu, Shaoyan Yang, Qinsheng Zhu, Zhanguo Wang,