Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1791812 | Journal of Crystal Growth | 2012 | 4 Pages |
Abstract
⺠Growth velocity of seeded SiC is studied. ⺠Growth velocity is mainly determined by phase diagram. ⺠Temperature field in a furnace should increase to increase growth velocity of SiC. ⺠Distribution of carbon in the melt is modified by temperature in a furnace.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
F. Inui, B. Gao, S. Nakano, K. Kakimoto,