Article ID Journal Published Year Pages File Type
1791812 Journal of Crystal Growth 2012 4 Pages PDF
Abstract
► Growth velocity of seeded SiC is studied. ► Growth velocity is mainly determined by phase diagram. ► Temperature field in a furnace should increase to increase growth velocity of SiC. ► Distribution of carbon in the melt is modified by temperature in a furnace.
Keywords
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
Preview
Numerical analysis of the velocity of SiC growth by the top seeding method
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