| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791817 | Journal of Crystal Growth | 2012 | 5 Pages |
Abstract
⺠Undoped n-type BaSi2 layers were grown epitaxially on Si(111). ⺠Grain size of the BaSi2 was found to be 0.1-0.3 μm. ⺠Grain boundaries were found to consist of {011} plane of BaSi2. ⺠Diffusion length of minority carriers in the n-BaSi2 was estimated to be about 10 μm.
Related Topics
Physical Sciences and Engineering
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Condensed Matter Physics
Authors
Masakazu Baba, Katsuaki Toh, Kaoru Toko, Noriyuki Saito, Noriko Yoshizawa, Karolin Jiptner, Takashi Sekiguchi, Kosuke O. Hara, Noritaka Usami, Takashi Suemasu,