| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791831 | Journal of Crystal Growth | 2012 | 5 Pages |
The growth and annihilation mechanism of pit type defects in HVPE grown thick GaN films was studied using a cross sectional cathodoluminescence (CL) technique. Two kinds of pit type defects were distinguished by their morphology: the hexagonal V-pit surrounded by {10−11} facets and the U-pit with {10−11} facets having a blunt bottom. It was found that the V-pit originated from different growth rates between (0001) plane and {10−11} facet, and was filled and annihilated by {10−12} facets’ growth, namely U-pit generation. The formation of U-pit may play an important role in annihilation of pit type defects.
► Growth and annihilation mechanism of pits was studied by a cross sectional CL. ► Two kinds of pits were separated: V-pit by {10−11} facets, and U-pit of blunt bottom. ► V-pit originated from different growth rates between (0001) and {10−11} facets. ► V-pit was filled and annihilated by {1012} facets growth (U-pit generation). ► Formation of U-pit may play an important role in annihilation of the pits.
