| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791835 | Journal of Crystal Growth | 2012 | 6 Pages |
Abstract
⺠The electrical activity of Ga impurity in PbTe depends upon the doping technique. ⺠The electrical activity of Ga impurity depends upon the deviation from stoichiometry δ in PbTe. ⺠At T=77 K the IR sensitivity of PbTeãGaã increases in 500 times in comparison with undoped PbTe. ⺠The heterogeneous (PbTe+GaTe), (PbTe+GaTe+Ga2Te3) samples have the best IR sensitivity. ⺠The model to explain the complicated amphoteric behaviour of Ga atoms in PbTe.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
A.M. Samoylov, S.V. Belenko, M.K. Sharov, E.A. Dolgopolova, V.P. Zlomanov,