A comparative study on the growth of germanium–silicon single crystals grown by the vertical Bridgman and axial heat processing techniques

The influence of a submerged baffle on single crystal growth of germanium–silicon is investigated. Twelve crystals have been grown. Eight of them have been grown using the axial heat processing (AHP) technique which makes use of a baffle submerged into the melt. The other crystals have been grown using the conventional vertical Bridgman (VB) technique. Crystals have been grown with 5 and 12 at% silicon at two different velocities, 0.75 and 2 mm/h. Compositional mapping of crystals has been performed by energy dispersive X-ray spectroscopy (EDS). Then, effects of a submerged baffle on the longitudinal and radial solute distribution and interface stability have been discussed.

► Twelve Ge–Si crystals are grown by the vertical Bridgman and AHP techniques. ► Interface shape, solute redistribution, and stability are investigated. ► A submerged baffle in AHP reduces radial segregation and enhances stability. ► AHP Back-Diffusion model predicts interface stability quite well.