| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791856 | Journal of Crystal Growth | 2012 | 6 Pages |
Abstract
⺠Novel mushroom structure is formed by a simple anneal of a GaN buffer layer. ⺠Cap of the mushroom structure is identified as wurtzitic GaN. ⺠Stem region is observed to remain zinc-blende. ⺠Structure energy difference between the two phases drives the mushroom formation. ⺠This study provides a wider perspective on the use of the GaN buffer layer.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Sung Bo Lee, Tae-Wan Kwon, Jungwon Park, Won Jin Choi, Hae Sung Park,