| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791903 | Journal of Crystal Growth | 2011 | 7 Pages |
Abstract
⺠A model is developed for solute redistribution in crystals grown by AHP technique. ⺠The model considers back diffusion in AHP. ⺠The model is extended to predict interface stability based on the CS criterion. ⺠The model is verified using Ge-Si crystals with various experimental parameters. ⺠Model predictions are in good agreement with the experimental data.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Aidin Dario, Hasan Ozgen Sicim, Ercan Balikci,