| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791907 | Journal of Crystal Growth | 2011 | 4 Pages |
Abstract
⺠The structures with InAs quantum dots were grown by droplet epitaxy. ⺠Well-defined wetting layer is observed in the structures. ⺠This wetting layer has high smoothness of heterointerface and low concentration of defects. ⺠As a result the carrier transfer from the wetting layer to the QDs is highly efficient.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
A.A. Lyamkina, D.S. Abramkin, D.V. Dmitriev, D.V. Gulyaev, A.K. Gutakovsky, S.P. Moshchenko, T.S. Shamirzaev, A.I. Toropov, K.S. Zhuravlev,