Trapezoid defect in 4H–SiC epilayers

A new type of extended defect was identified in 4H–SiC homoepitaxial epilayers. The defect has a characteristic trapezoidal shape with parallel sides perpendicular to the off-cut direction in ultraviolet photoluminescence intensity maps. Structural characterization of the defect using a transmission electron microscope revealed that the trapezoid defect consisted of multiple Frank type stacking faults. The faults originate in the substrate and propagate into the epilayer during epitaxy.

► A new defect in 4H–SiC epilayers is reported. ► The defect had a trapezoidal morphology in the epilayer under ultraviolet imaging. ► The defect was found to have originated in the substrate. ► High resolution transmission electron analysis was performed. ► It was found that the defect structure consisted of a Frank type stacking fault.