High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures

We report on a growth of AlN at reduced temperatures of 1100 °C and 1200 °C in a horizontal-tube hot-wall metalorganic chemical vapor deposition reactor configured for operation at temperatures of up to 1500–1600 °C and using a joint delivery of precursors. We present a simple route—as viewed in the context of the elaborate multilayer growth approaches with pulsed ammonia supply—for the AlN growth process on SiC substrates at the reduced temperature of 1200 °C. The established growth conditions in conjunction with the particular in-situ intervening SiC substrate treatment are considered pertinent to the accomplishment of crystalline, relatively thin, ∼700 nm, single AlN layers of high-quality. The feedback is obtained from surface morphology, cathodoluminescence and secondary ion mass spectrometry characterization.

► A simple route for AlN growth process on SiC at the reduced temperature of 1200 °C. ► The established growth conditions involve joint delivery of TMAl and NH3 precursors. ► Accomplishment of crystalline, thin, ∼700 nm, single AlN layers of device quality.