| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791931 | Journal of Crystal Growth | 2012 | 6 Pages |
The BiFe0.95Mn0.05O3 films were fabricated on Pt/Ti/SiO2/Si and Bi2O3/Pt/Ti/SiO2/Si substrates using a sol–gel process. Saturated square P–E hysteresis loops can be observed at frequencies ranging from 1 to 16.7 kHz for both films. The BiFe0.95Mn0.05O3 film on Bi2O3/Pt/Ti/SiO2/Si exhibits a larger 2Pr (∼156 μC/cm2), smaller 2Ec (∼510 kV/cm), more symmetric P–E loops, stronger charge retaining capability (the loss of ΔP is only 2% after 104 s) and fatigue resistance (no loss of ΔP is observed after 1010 switching cycles) compared to the film deposited directly on Pt/Ti/SiO2/Si. More importantly, the former can be uniformly polarized using a piezoelectric-mode atomic force microscopic system and exhibits a larger piezoelectric coefficient (∼64 pm/V). These results should be due to the Bi2O3 buffer layer, which can favor the grain growth and hence elimination of defect complexes formed between the negatively charged defects such as (MnFe3+2+)′ or (FeFe3+2+)′ and oxygen vacancies.
► The Bi2O3 layer can enhance the crystallinity of BFMO film. ► The Bi2O3 layer does not deteriorate the insulating characteristic of BFMO film. ► The ferroelectric properties of BFMO film can be enhanced by the Bi2O3 layer. ► The d33 value of BFMO film on Bi2O3-buffered substrate is 64 pm/V.
