| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791938 | Journal of Crystal Growth | 2012 | 4 Pages |
Abstract
⺠GaN HFETS on SiC substrates are investigated using full wafer imaging techniques. ⺠Defects in SiC are shown to have a limited impact on the 2DEG properties. ⺠Non-uniformity in the 2DEG are related to variations in the SiC substrate off-cut angle.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
D.J. Wallis, P.J. Wright, D.E.J. Soley, L. Koker, M.J. Uren, T. Martin,