Article ID Journal Published Year Pages File Type
1791938 Journal of Crystal Growth 2012 4 Pages PDF
Abstract
► GaN HFETS on SiC substrates are investigated using full wafer imaging techniques. ► Defects in SiC are shown to have a limited impact on the 2DEG properties. ► Non-uniformity in the 2DEG are related to variations in the SiC substrate off-cut angle.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
Authors
, , , , , ,