| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1791940 | Journal of Crystal Growth | 2012 | 5 Pages |
Abstract
⺠(11-22) semipolar GaN including periodic triangular cavities was grown by MOCVD. ⺠300 μm thick (11-22) semipolar GaN was regrown to keep the exposed N-polar GaN. ⺠The N-polar GaN can be etched to (0002) direction with high etching rate. ⺠The thick (11-22) semipolar GaN was completely separated from the m-plane sapphire. ⺠The free-standing (11-22) semipolar GaN without m-sapphire was strain-free.
Related Topics
Physical Sciences and Engineering
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Condensed Matter Physics
Authors
Dae-Woo Jeon, Seung-Jae Lee, Tak Jeong, Jong Hyeob Baek, Jae-Woo Park, Lee-Woon Jang, Myoung Kim, In-Hwan Lee, Jin-Woo Ju,