Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1791995 | Journal of Crystal Growth | 2012 | 5 Pages |
Abstract
Epitaxial Ti3GeC2 thin films were deposited on 4° off-cut 4H-SiC(0001) using magnetron sputtering from high purity Ti, C, and Ge targets. Scanning electron microscopy and helium ion microscopy show that the Ti3GeC2 films grow by lateral step-flow with {112̄0} faceting on the SiC surface. Using elastic recoil detection analysis, atomic force microscopy, and X-Ray diffraction the films were found to be substoichiometric in Ge with the presence of small Ge particles at the surface of the film.
► Epitaxial growth of Ti3GeC2(0001) on 4H-SiC(0001) using magnetron sputtering. ► Ti3GeC2 films grow by lateral step-flow with {112̄0} faceting on the SiC surface. ► Films are substoichiometric in Ge with small Ge particles present at the surface.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
K. Buchholt, P. Eklund, J. Jensen, J. Lu, R. Ghandi, M. Domeij, C.M. Zetterling, G. Behan, H. Zhang, A. Lloyd Spetz, L. Hultman,