| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1792002 | Journal of Crystal Growth | 2012 | 7 Pages |
Quasi binary semiconductor compound of Cd/Ga/Te and the crystal dynamics involving the solubility of the gallium in CdTe were studied. The stiochiometry of the cadmium, gallium and telluride were optimized to obtain the single crystals of Cd0.89Ga0.11Te (CGT). CGT single crystals were grown by vertical Bridgman method for utility in thermoelectric devices. The optimum temperature profile was studied for obtaining the single crystal and the zincblende phase for CGT was identified. The structural analysis and refinement was done with Rietveld measurements. The crystal compositional analysis homogeneity was studied and the segregation of the telluride was analyzed by energy dispersive spectrum. The electrical resistivity was measured. The thermal conductivity measurement on CGT single crystals reveals the contribution of the phonon scattering leading to lower value of thermal conductivity.
► Cadmium gallium telluride crystals grown by vertical Bridgman technique is studied. ► GaTe/CdTe sandwich structure could lead to new options apart from Bi2Te3. ► Control of the solubility of gallium in CdTe sustains the thermoelectric properties.
