| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1792003 | Journal of Crystal Growth | 2012 | 5 Pages |
The free carrier concentration and compensation ratio of unintentionally doped InAs were reliably determined by evaluating the conduction characteristics of as-grown and hydrogenated epilayers. The free carrier concentration has also been obtained using steady-state capacitance measurements performed on p–i–n diodes fabricated using various growth conditions. The influence the growth temperature has on the electrical characteristics of unintentionally doped InAs thin films is presented.
► Determined the background doping of MOVPE grown InAs using galvanometric measurements. ► Determined InAs conduction properties by comparing as-grown and hydrogenated epilayers. ► Concluded that the InAs background doping decreases with increasing growth temperature.
