Microstructure of PAMBE-grown InN layers on Si(1 1 1)

The microstructure of InN layers grown by plasma-assisted molecular beam epitaxy on Si(111) substrates and an AlN buffer layer was investigated. InN layers with a thickness of ∼500 nm were deposited at substrate temperatures between 325 °C and 375 °C under otherwise identical conditions. The structural characterization was performed by scanning electron microscopy and different transmission electron microscopy techniques including selective-area electron diffraction, electron-energy loss spectroscopy and energy-dispersive X-ray spectroscopy. The microstructure of the InN layers changes considerably despite the comparably small interval of growth temperatures.

► InN growth on Si(1 1 1) with AlN buffer layer. ► Slight variation in growth temperature alters morphology significantly. ► Meltback etching of silicon substrate.