Article ID Journal Published Year Pages File Type
1792007 Journal of Crystal Growth 2012 7 Pages PDF
Abstract

The microstructure of InN layers grown by plasma-assisted molecular beam epitaxy on Si(111) substrates and an AlN buffer layer was investigated. InN layers with a thickness of ∼500 nm were deposited at substrate temperatures between 325 °C and 375 °C under otherwise identical conditions. The structural characterization was performed by scanning electron microscopy and different transmission electron microscopy techniques including selective-area electron diffraction, electron-energy loss spectroscopy and energy-dispersive X-ray spectroscopy. The microstructure of the InN layers changes considerably despite the comparably small interval of growth temperatures.

► InN growth on Si(1 1 1) with AlN buffer layer. ► Slight variation in growth temperature alters morphology significantly. ► Meltback etching of silicon substrate.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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