High-uniformity InP-based resonant tunneling diode wafers with peak current density of over 6×105 A/cm2 grown by metal-organic vapor-phase epitaxy

On-wafer uniformity of InP-based InGaAs/AlAs resonant tunneling diodes (RTDs) grown in a mass-production-type metal–organic vapor-phase epitaxy (MOVPE) reactor was investigated. The X-ray diffraction (XRD) measurements revealed the high uniformity of layer thickness and composition of the 3-in. RTD wafers. The RTDs exhibited excellent current–voltage characteristics with high JP of over 6×105 A/cm2 and the peak-to-valley ratio (PVR) of over 3. A small variation of JP of ±7.9% across the 3-in. wafers was obtained, which corresponded to on-wafer AlAs barrier thickness variation of ±0.03 nm. The small run-to-run variation of JP also indicates good reproducibility.

► We report on-wafer uniformity of InP-based resonant tunneling diodes (RTDs) grown by MOVPE. ► The RTDs exhibited high JP of over 6×105 A/cm2 and high peak-to-valley ratio (PVR) of over 3. ► Small variation of JP of ±7.9% across the 3-in. wafers corresponded to the variation of AlAs thickness of ±0.03 nm. ► XRD measurements supported on-wafer uniformity of thickness and composition. ► Small run-to-run variation of JP also indicates good reproducibility.