| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1792066 | Journal of Crystal Growth | 2011 | 5 Pages |
Abstract
⺠InAs layer growth on Si (1 1 1) by MOVPE. ⺠GaSb on InAs (1 1 1). ⺠GaSb nanowire growth on GaSb (1 1 1).
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Sepideh Gorji Ghalamestani, Martin Berg, Kimberly A. Dick, Lars-Erik Wernersson,