| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1792068 | Journal of Crystal Growth | 2011 | 6 Pages |
Transmission electron microscopy (TEM) studies are presented for Au-assisted vapor–liquid–solid (VLS) nanowire growth of gallium arsenide/gallium phosphide (GaAs/GaP) axial heterostructures. The supersaturation of the liquid Au-III–V alloy droplet during MBE growth was found to have a profound impact on both the crystal phase and growth rate of the nanowire heterostructures. Among these effects was the appearance of a previously unreported 4H GaP crystal phase. 4H GaP occurred at low Au-III–V droplet supersaturation following the transition from GaAs to GaP growth. Both crystal phase and growth rate were different for GaAs and GaP, underlining the importance of group V elements in Au-III–V droplet supersaturation and thus VLS nanowire growth.
► GaAs/GaP axial heterostructure nanowires were grown via Au-assisted VLS process. ► Polytype formation in GaP was observed including zincblende, wurtzite, and 4H. ► The first report of 4H GaP. ► The growth rate and crystal phase behavior in GaAs and GaP differed. ► The importance of group V elements in VLS growth is demonstrated.
