Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1792075 | Journal of Crystal Growth | 2011 | 7 Pages |
Abstract
⺠Silicon ingot could be directionally solidified by EMC under appropriate parameters. ⺠Three kinds of solid/liquid interface are observed in those ingots that cast. ⺠Increasing the input power and withdrawal velocity can decrease h, θ, δ and w. ⺠Increasing the initial heat preservation time can only increase w.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Ruirun Chen, Feng Huang, Jingjie Guo, Hongsheng Ding, Yanqing Su, Jieren Yang, Hengzhi Fu,