| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1792084 | Journal of Crystal Growth | 2011 | 4 Pages |
Abstract
âºSingle crystals of the quaternary phase AgCd2GaSe4 were grown using the method of directed crystallization. âºEnergy gap of the crystals was estimated â¼1.7 eV at T=293 K. âºDefect band with an activation energy of â¼0.30 eV in the upper half of the energy band gap was identified. âºThe disorder parameter of â¼0.079 eV was evaluated. âºDensity of the point defects responsible for the absorption edge blurring was determined to be â¼1.4Ã1020 cmâ3.
Related Topics
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Condensed Matter Physics
Authors
V.V. Bozhko, L.V. Bulatetska, G.Ye. Davydyuk, O.V. Parasyuk, A.P. Tretyak, N. Vainorius, V. Kažukauskas,