| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1792089 | Journal of Crystal Growth | 2011 | 4 Pages |
Abstract
⺠A successful method to epitaxy GaAsBi layer on (0 0 1) GaAs substrate is proposed. ⺠Reflectance signal is found to change significantly during both bismuth flashes and GaAs growth stages. ⺠Our growth method provides a GaAsBi graded composition layer and not an alternated Bi/GaAs heterostructure.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Z. Chine, H. Fitouri, I. Zaied, A. Rebey, B. El Jani,