Phosphorus donor incorporation in (1 0 0) homoepitaxial diamond: Role of the lateral growth

With its superlative properties, diamond is a promising semiconductor for high power electronic applications in terms of operating temperature, breakdown voltage and thermal dissipation. The p-type doping is currently controlled but it is not the case for the n-type doping. In spite of the low solubility of substitutional donors bigger than carbon, n-type material can be achieved (with phosphorus dopant, Ed(P)=0.6 eV) via incorporation during the growth of diamond. In this study, we focus on the influence of growth parameters on the phosphorus incorporation in substitutional sites (methane ratio, miscut angle of vicinal substrates). We evidence the preferential incorporation of phosphorus donors in index planes such as (5 1 1) and (6 1 1).

► Efficient phosphorus donor incorporation for n-type diamond with high methane ratio. ► P donor incorporation depends on the miscut angle of Ib HPHT (1 0 0) diamond substrate. ► Preferential incorporation of phosphorus donors in index planes: first evidence.