| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1792102 | Journal of Crystal Growth | 2011 | 5 Pages |
Abstract
⺠A silicon thin film grown epitaxially through holes in a substrate. ⺠Deposition chamber configuration strongly affects in-hole growth rates. ⺠Gas flow simulations show that the laminar boundary layer correlates to the layer growth. ⺠Samples produced with this process resulted in solar cell efficiencies over 13%.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Nils Brinkmann, David Pócza, Emily J. Mitchell, Stefan Reber,