Article ID Journal Published Year Pages File Type
1792104 Journal of Crystal Growth 2011 7 Pages PDF
Abstract
► Self-limited true ALD growth of AlN films within 100-200 C is reported. ► Saturated chemisorption reactions betweenTMA and NH3 or N2/H2 precursors are achieved. ► The ALD temperature window remained the same for both group-V source materials (NH3 and N2/H2). ► Optical properties of both AlN films were similar except for a slight difference in the optical band edge and optical phonon positions. ► Al-Al bond was detected near the surface of AlN(NH3) samples, whereas AlN(N2/H2) films exhibited Al-N bond only.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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