Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1792104 | Journal of Crystal Growth | 2011 | 7 Pages |
Abstract
⺠Self-limited true ALD growth of AlN films within 100-200 C is reported. ⺠Saturated chemisorption reactions betweenTMA and NH3 or N2/H2 precursors are achieved. ⺠The ALD temperature window remained the same for both group-V source materials (NH3 and N2/H2). ⺠Optical properties of both AlN films were similar except for a slight difference in the optical band edge and optical phonon positions. ⺠Al-Al bond was detected near the surface of AlN(NH3) samples, whereas AlN(N2/H2) films exhibited Al-N bond only.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Mustafa Alevli, Cagla Ozgit, Inci Donmez, Necmi Biyikli,