| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1792106 | Journal of Crystal Growth | 2011 | 4 Pages |
Abstract
⺠We study Ge epitaxy within trench-patterned SiO2 templates on Si and Ge substrates. ⺠We study the relationship between SiO2 template geometry and twin defect morphology. ⺠Finite element modeling of thermal stress and its role in dislocation nucleation.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Darin Leonhardt, Swapnadip Ghosh, Sang M. Han,