| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1792130 | Journal of Crystal Growth | 2011 | 4 Pages |
Abstract
⺠The morphology of GaN etched in hydrogen at different temperatures is studied. ⺠H2 etching has controllable etching directions. ⺠The activation energy of the rate-limiting step of hydrogen etching is 3.7 eV. ⺠A 320 μm-thick GaN layer has self-separated from the underlying sapphire substrate.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yen-Hsien Yeh, Kuei-Ming Chen, Yin-Hao Wu, Ying-Chia Hsu, Tzu-Yi Yu, Wei-I Lee,