| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1792146 | Journal of Crystal Growth | 2011 | 5 Pages |
Tin oxide thin films were grown by atmospheric pressure chemical vapor deposition (APCVD) on glass substrates at temperatures of 400, 500 and 600 °C with various deposition times from 15 to 60 min with 15 min time intervals. A homemade horizontal reactor was used for deposition from SnCl2+2H2O precursors with pure oxygen flowing at a rate of 5 ccpm. Optical and electrical properties were studied for determining the relationship between physical properties and production parameters of the resultant thin films. The structure was analyzed by scanning electron microscopy and X-ray diffraction methods. Electrical and optical properties were studied to determine resistivity, visible light transmission and infrared transmission optical transmittance of the coatings for different, specific application areas.
► Tin oxide based thin films deposited from SnCl2·5H2O by APCVD. ► Analyzing the effect of substrate temperature and time on microstructure and phase growth. ► Double oxides of SnO2 and SnO were detected at 600 oC over 30 min deposition time. ► Thick films produced decreased amount of optical transmission. ► Double phase deposited thin films resulted in increase in resistivity and decrease in infrared isolation.
