| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1792148 | Journal of Crystal Growth | 2011 | 7 Pages |
Abstract
⺠Vertical Bridgman growth of GeSi alloy with an average Si composition of 15 atom% was performed on large melt volume. ⺠Axial Si composition is described by a one-dimensional model including complete mixing and equilibrium Si segregation coefficient. ⺠Excellent agreement between theory and experiment shows that the GeSi phase diagram in the Ge-rich region is determined accurately.
Related Topics
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Condensed Matter Physics
Authors
J.K. Woodacre, D. Labrie, M.Z. Saghir,