| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1792157 | Journal of Crystal Growth | 2011 | 5 Pages |
Abstract
⺠Surface morphology changed from rough to smooth with the NH3 concentration increased. ⺠Oxygen concentration in growth layer decreased with increasing NH3 concentration. ⺠GaN layer with growth rate of 12 μm/h and [O] of 2.5Ã1017 atoms/cm3 was obtained. ⺠Relationship between surface morphology and [O] was clarified.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yuan Bu, Mamoru Imade, Hiroki Kishimoto, Masashi Yoshimura, Takatomo Sasaki, Yasuo Kitaoka, Masashi Isemura, Yusuke Mori,