| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1792191 | Journal of Crystal Growth | 2011 | 4 Pages |
Abstract
⺠Nonpolar a-GaN epilayers were grown on off-cut r-sapphire substrates using MOCVD. ⺠The effect of the off-cut angle on the formation of BSFs was microstructurally investigated using TEM. ⺠From HRTEM images, we found that formation mechanism of BSFs was attributed to the tilted growth of the a-GaN epilayers. ⺠Formation and reduction mechanisms of BSFs in a-GaN epilayers were discussed.
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Bo Hyun Kong, Hyung Koun Cho, Keun Man Song, Dea Ho Yoon,