| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1792196 | Journal of Crystal Growth | 2011 | 4 Pages |
The structural properties of crystalline silicon (Si) films on bare and aluminum-doped zinc oxide (AZO)-coated glass substrates were comparatively investigated by X-ray diffractometer, Raman spectroscopy, and transmission electron microscope. It was observed that for the amorphous Si (a-Si) films on bare and AZO-coated glass substrates subjected to five-step rapid thermal annealing (RTA) at 750 °C/60 s, they were both polycrystalline in nature and, moreover, the Si characteristic peak intensity of Si films on AZO-coated glass was slightly higher than that of Si films on bare glass, while the crystalline volume fractions of Si films on both substrates were nearly similar. Furthermore, it was revealed that a-Si films on AZO-coated glass can be crystallized when subjected to five-step RTA 750 °C/60 s, while Zn2SiO4 new phase was formed at RTA temperature of 900 °C or higher, which may influence the crystalline Si films property.
► The Si films on bare and AZO-coated glass were polycrystalline in nature. ► AZO film substrate slightly enhanced the Si characteristic peak intensity. ► The crystalline volume fractions of Si films on bare and AZO-coated glass substrates were nearly similar. ► Zn2SiO4 phase was formed for a-Si/AZO subjected to RTA at 900 °C or higher.
