| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1792223 | Journal of Crystal Growth | 2011 | 4 Pages |
Abstract
⺠P-type doped 3C-SiC is grown on 150 mm Si substrate by atomic-layer epitaxy at 1000 °C. ⺠The equipment is conventional low-pressure chemical vapor deposition reactor. ⺠The doping element is aluminum. ⺠Aluminum concentration is proportional to supply volume of trimethylaluminium.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Li Wang, Sima Dimitrijev, Jisheng Han, Philip Tanner, Alan Iacopi, Leonie Hold,