Growth rate enhancement of InAs nanowire by molecular beam epitaxy

Surface diffusion kinetics plays a major role in the growth of III–V nanowires by the molecular beam epitaxial (MBE) technique. As/In flux is one of the key factors in determining the diffusion length, which eventually affect the growth rate, morphology and length of the InAs nanowire. To identify a better growth condition and to attain a maximum growth rate and longer diffusion length, a systematic analysis has been carried out on the growth of InAs nanowire by varying In- and As-flux. The results have shown that the growth rate and length of the nanowires can be improved to a maximum of 3.8 nm/s and 14 μm, respectively, which is found to be the maximum by the MBE technique in the available reports.