Article ID Journal Published Year Pages File Type
1792285 Journal of Crystal Growth 2011 5 Pages PDF
Abstract

We report an investigation of the structural properties of CuCr0.95Mg0.05O2 films on c-plane sapphire substrates using pulsed laser deposition. The thin films were grown at different temperatures of 500, 600, and 700 °C with an oxygen partial pressure of 10 mTorr. c-axis oriented epitaxial CuCr0.95Mg0.05O2 thin films on c-plane sapphire substrates with an in-plan 30° rotation were obtained. The sixfold rotational symmetry in the pole figures from the (0 1 2) plane indicates that there are two different types of crystal grains in which the a-axes rotate by 60° with respect to each other around the c-axis. The reason for the 30° rotation is assumed to be the presence of the ∼10% mismatch of oxygen distance between the c-plane sapphire substrate and the CuCr0.95Mg0.05O2 on the c-plane. The epitaxial crystallographic relationship between CuCr0.95Mg0.05O2 and Al2O3 was (0 0 0 6)CuCrO2//(0 0 0 3)Al2O3 and [1 0 −1 0]CuCrO2//[1 1 −2 0]Al2O3. The presence of twins in the films and the surface morphology were investigated using transmission electron microscopy and scanning electron microscopy, respectively.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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