Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD

The optimal conditions of p-type activation for nonpolar a-plane (1 1 –2 0) p-type GaN films on r-plane (1 –1 0 2) sapphire substrates with various off-axis orientations have been investigated. Secondary ion mass spectrometry (SIMS) measurements show that Mg doping concentrations of 6.58×1019 cm−3 were maintained in GaN during epitaxial growth. The samples were activated at various temperatures and periods of time in air, oxygen (O2) and nitrogen (N2) gas ambient by conventional furnace annealing (CFA) and rapid thermal annealing (RTA). The activation of nonpolar a-plane p-type GaN was successful in similar annealing times and temperatures when compared with polar c-plane p-type GaN. However, activation ambient of nonpolar a-plane p-type GaN was clearly different, where a-plane p-type GaN was effectively activated in air ambient. Photoluminescence shows that the optical properties of Mg-doped a-plane GaN samples are enhanced when activated in air ambient.